Electron Transport in III-V Nitride Two-Dimensional Electron Gases

Electron Transport in III-V Nitride Two-Dimensional Electron Gases

We present a study of electron scattering processes in AlGaN/GaN two-dimensional electron gases. A theoretical study of the effect of deformation potential scattering from strain fields surrounding dislocations is presented. The most important scattering mechanisms limiting electron transport are identified. We find that for AlGaN/GaN 2DEGs, mobility is limited by alloy scattering at high 2DEG ...

Dipole scattering in polarization induced III–V nitride two-dimensional electron gases

Unusually large spontaneous and piezoelectric fields in the III–V nitrides have led to the making of an entirely new class of two-dimensional electron gas. Fluctuation from a perfectly periodic binary structure in highly polar semiconductor alloys present the same physical situation as a random distribution of microscopic dipoles. The excess dipole distribution in the barrier layers is evaluate...

Nonlinear screening in two-dimensional electron gases.

We have performed self-consistent calculations of the nonlinear screening of a point charge Z in a two-dimensional electron gas using a density functional theory method. We find that the screened potential for a Z=1 charge supports a bound state even in the high-density limit where one might expect perturbation theory to apply. To explain this behavior, we prove a theorem to show that the resul...

Tunneling between parallel two-dimensional electron gases.

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature T , carrier density n, and the applied perpendicular magnetic field B. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of th...

InGaAs/GaAsSb based two-dimensional electron gases